US 12,190,944 B2
Memory device with signal edge sharpener circuitry
Atul Katoch, Kanata (CA)
Assigned to Taiwain Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 19, 2021, as Appl. No. 17/234,160.
Application 17/234,160 is a division of application No. 16/589,971, filed on Oct. 1, 2019, granted, now 10,984,854.
Prior Publication US 2021/0241825 A1, Aug. 5, 2021
Int. Cl. G11C 11/418 (2006.01); G11C 11/417 (2006.01)
CPC G11C 11/418 (2013.01) [G11C 11/417 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
transmitting a clock signal to a row driver circuit and to a delay circuit:
deactivating a word line based on the clock signal received by the row driver circuit, the word line operably connected to a memory cell;
transmitting a delayed clock signal output by the delay circuit to a control terminal of signal edge sharpener circuitry operably connected to a distal end of the word line;
based on the delayed clock signal, causing, by the signal edge sharpener circuitry, a rising edge of a word line signal on the word line to be pulled up at an increased rate; and
initiating a precharge operation on a bit line in response to the rising edge of the word line signal on the word line being pulled up to a predetermined level.