US 12,190,928 B2
Magnetoresistive random access memory device having a metal layer doped with a magnetic material
Younghyun Kim, Seoul (KR); Sechung Oh, Yongin-si (KR); Heeju Shin, Seoul (KR); Jaehoon Kim, Seoul (KR); Sanghwan Park, Suwon-si (KR); and Junghwan Park, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 21, 2022, as Appl. No. 17/970,788.
Claims priority of application No. 10-2021-0177748 (KR), filed on Dec. 13, 2021.
Prior Publication US 2023/0186963 A1, Jun. 15, 2023
Int. Cl. G11C 11/00 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/1673 (2013.01) [G11C 11/1653 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetoresistive random access memory device, comprising:
a pinned layer;
a tunnel barrier layer on the pinned layer;
a free layer structure on the tunnel barrier layer, the free layer structure including a plurality of magnetic layers and a plurality of metal insertion layers between adjacent ones of the plurality of magnetic layers; and
an upper oxide layer on the free layer structure,
wherein:
each metal insertion layer of the plurality of metal insertion layers includes a non-magnetic metal material doped with a magnetic material,
the magnetic material doped into each metal insertion layer of the plurality of metal insertion layers has a structure including particles extending in a vertical direction between adjacent magnetic layers of the plurality of magnetic layers, and
each metal insertion layer is spaced apart from each other metal insertion layer of the plurality of metal insertion layers.