US 12,190,919 B2
Dual FGL and dual SPL spintronic device to reduce perpendicular field at writing location
Muhammad Asif Bashir, San Jose, CA (US); Alexander Goncharov, Morgan Hill, CA (US); Zhigang Bai, Fremont, CA (US); Masato Shiimoto, Fujisawa (JP); and Yunfei Ding, Fremont, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Jul. 25, 2023, as Appl. No. 18/226,109.
Claims priority of provisional application 63/421,486, filed on Nov. 1, 2022.
Prior Publication US 2024/0144962 A1, May 2, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G11B 5/235 (2006.01); G11B 5/127 (2006.01); G11B 5/31 (2006.01); G11B 5/00 (2006.01)
CPC G11B 5/3146 (2013.01) [G11B 5/1278 (2013.01); G11B 5/235 (2013.01); G11B 5/314 (2013.01); G11B 2005/0024 (2013.01); G11B 5/3116 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A magnetic recording head comprising:
a shield;
a main pole; and
a spintronic device disposed between the shield and the main pole, the spintronic device comprising:
a first spin kill layer disposed adjacent to the shield;
a first spin polarization layer disposed between the first spin kill layer and the main pole;
a first field generation layer disposed between the first spin polarization layer and the main pole;
a second spin polarization layer disposed between the first field generation layer and the main pole;
a second spin kill layer disposed between the second spin polarization layer and the main pole;
a first negative beta material layer disposed between the second spin kill layer and the main pole; and
a second field generation layer disposed between the first negative beta material layer and the main pole.