US 12,190,788 B2
μ-LED, μ-LED device, display and method for the same
Thorsten Baumheinrich, Altdorf (DE); Peter Brick, Regensburg (DE); Jean-Jacques Drolet, Obertraubling (DE); Hubert Halbritter, Dietfurt-Toeging (DE); Laura Kreiner, Regensburg (DE); Jens Richter, Hemau (DE); Thomas Schwarz, Regensburg (DE); Paul Ta, Fremont, CA (US); Kilian Regau, Regensburg (DE); Christopher Soell, Veitsbronn (DE); Hoa Vu, Milpitas, CA (US); Christopher Wiesmann, Barbing (DE); Patrick Hoerner, Regensburg (DE); Jong Park, Sunnyvale, CA (US); and Kanishk Chand, Santa Clara, CA (US)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Filed on Oct. 29, 2021, as Appl. No. 17/515,102.
Application 17/515,102 is a continuation of application No. 17/039,482, filed on Sep. 30, 2020, granted, now 11,302,248.
Application 17/039,482 is a continuation of application No. PCT/EP2020/052191, filed on Jan. 29, 2020.
Claims priority of provisional application 62/937,552, filed on Nov. 19, 2019.
Claims priority of application No. PA201970059 (DK), filed on Jan. 29, 2019; application No. 10 2019 102 509.5 (DE), filed on Jan. 31, 2019; application No. 10 2019 110 497.1 (DE), filed on Apr. 23, 2019; application No. 10 2019 110 523.4 (DE), filed on Apr. 23, 2019; application No. 10 2019 112 124.8 (DE), filed on May 9, 2019; application No. 10 2019 113 792.6 (DE), filed on May 23, 2019; and application No. 10 2019 115 479.0 (DE), filed on Jun. 7, 2019.
Prior Publication US 2022/0051615 A1, Feb. 17, 2022
Int. Cl. G09G 3/32 (2016.01); B60K 35/00 (2024.01); B60K 35/22 (2024.01); G09G 5/10 (2006.01)
CPC G09G 3/32 (2013.01) [B60K 35/00 (2013.01); G09G 5/10 (2013.01); B60K 35/22 (2024.01); B60K 2360/1523 (2024.01); B60K 2360/349 (2024.01); G09G 2320/0633 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A display arrangement comprising:
an IC substrate component with monolithic integrated circuits and with IC substrate contacts arranged as a matrix; a monolithic pixelated optochip comprising a semiconductor layer sequence with a first semiconductor layer having a first doping and a second semiconductor layer having a second doping, wherein the polarity of the charge carriers in the first semiconductor layer differs from that of the second semiconductor layer and the semiconductor layer sequence defines a stacking direction;
wherein μ-LEDs arranged as a matrix are present in the monolithic pixelated optochip;
wherein each μ-LED has a μ-LED rear side facing the IC substrate component and a first light source contact which adjoins the first semiconductor layer in a contacting manner and is electrically conductively connected to a respective one of the IC substrate contacts;
wherein the projection area of the first light source contact on the μ-LED rear surface is at most half the area of the μ-LED rear surface;
wherein the first light source contact in a lateral direction perpendicular to the stacking direction is surrounded by an absorber on the rear side;
wherein at least one of the first semiconductor layer or the second semiconductor layer is continuous across the μ-LEDs; and
wherein a second light source contact is adjacent to a transparent contact layer and the second light source contact of adjacent μ-LEDs are separated from each other by a front absorber on the front side in a lateral direction perpendicular to the stacking direction.