US 12,189,965 B2
Non-volatile memory device, storage device, operating method of storage controller, and operating method of the storage device
Hyojin Ahn, Suwon-si (KR); Seoyeong Lee, Suwon-si (KR); and Hoon Jo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 28, 2023, as Appl. No. 18/215,320.
Claims priority of application No. 10-2022-0130917 (KR), filed on Oct. 12, 2022.
Prior Publication US 2024/0126453 A1, Apr. 18, 2024
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); H10B 43/27 (2023.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An operating method of a storage device, the operating method comprising:
obtaining a plurality of points by searching for a first valley point between threshold voltage distributions of selection memory cells coupled to a selection word line of a plurality of word lines, each point of the plurality of points comprising a read voltage level and a memory cell count value;
calculating, using a first function, a first voltage level that corresponds to a first reference count value, the first function corresponding to first points from among the plurality of points having first read voltage levels higher than or equal to a valley read voltage level of the first valley point, the first reference count value being smaller than a first memory cell count value of the first valley point;
calculating, using a second function, a second voltage level that corresponds to the first reference count value, the second function corresponding to second points from among the plurality of points having second read voltage levels smaller than or equal to the valley read voltage level of the first valley point;
classifying the selection memory cells into a plurality of coupling patterns according to an aggressor cell group of each of adjacent memory cells coupled to at least one adjacent word line adjacent to the selection word line; and
performing a read operation, based on the plurality of coupling patterns of the selection memory cells, the first voltage level, and the second voltage level.