US 12,189,949 B2
Bit error management in memory devices
Jeremy Binfet, Boise, ID (US); Tommaso Vali, Sezze (IT); Walter Di Francesco, Avezzano (IT); Luigi Pilolli, L'Aquila (IT); Angelo Covello, Avezzano (IT); Andrea D'Alessandro, Avezzano (IT); Agostino Macerola, San Benedetto dei Marsi (IT); Cristina Lattaro, Rieti (IT); and Claudia Ciaschi, Latina (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 24, 2022, as Appl. No. 18/049,121.
Claims priority of provisional application 63/365,680, filed on Jun. 1, 2022.
Prior Publication US 2023/0393739 A1, Dec. 7, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/061 (2013.01) [G06F 3/0622 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a volatile memory;
a non-volatile memory; and
a controller configured to:
receive a command to read data in a first format from the non-volatile memory, the data being stored in a second format in the non-volatile memory, the second format comprising a plurality of copies of the data in the first format;
provide the plurality of copies of the data from the non-volatile memory to an error correction circuit;
compare, using the error correction circuit, the plurality of copies of the data to determine a dominant bit state for bits of the data;
store the dominant bit state for the bits of the data in the volatile memory as corrected data in the first format;
provide the corrected data from the volatile memory to the non-volatile memory; and
cause the corrected data to be read from the non-volatile memory in the first format as a response to the command to read the data in the first format.