US 12,189,295 B2
Spin coater and semiconductor fabrication method using the same
Myung-Soo Hwang, Seoul (KR); and Kwangsub Yoon, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 3, 2022, as Appl. No. 17/937,487.
Application 17/937,487 is a division of application No. 16/803,290, filed on Feb. 27, 2020, granted, now 11,537,047.
Claims priority of application No. 10-2019-0059191 (KR), filed on May 21, 2019.
Prior Publication US 2023/0025697 A1, Jan. 26, 2023
Int. Cl. B05D 1/02 (2006.01); B05B 13/02 (2006.01); B05B 15/50 (2018.01); B05B 15/55 (2018.01); B05C 11/02 (2006.01); G03F 7/16 (2006.01); H01L 21/67 (2006.01); B05B 1/24 (2006.01)
CPC G03F 7/162 (2013.01) [B05B 13/0228 (2013.01); B05B 15/50 (2018.02); B05B 15/55 (2018.02); B05C 11/02 (2013.01); B05D 1/02 (2013.01); H01L 21/67017 (2013.01); H01L 21/67051 (2013.01); H01L 21/6708 (2013.01); H01L 21/6715 (2013.01); B05B 1/24 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor fabrication method, comprising:
coating a photoresist on a substrate;
heating the substrate to cure the photoresist;
exposing the photoresist to light; and
developing the photoresist to form a photoresist pattern, wherein coating the photoresist includes:
providing the photoresist on the substrate by supplying the photoresist to a nozzle connected to a photoresist pipeline;
driving the nozzle to move toward a nozzle housing;
supplying a solvent into a solvent storage groove of a lower housing of the nozzle housing;
supplying a purge gas into a nozzle insert hole of an upper housing on the lower housing;
inhaling a first portion of the purge gas into a tip of the nozzle; and
inhaling a portion of the solvent into the tip of the nozzle,
wherein the photoresist pipeline includes:
an external line;
an internal line in the external line; and
a filler between an inner wall of the external line and an outer wall of the internal line, the filler containing the purge gas.