US 12,189,028 B2
Semiconductor device performing proximity sensing
Hyunjong Kim, Seoul (KR); Cyuyeol Rhee, Seoul (KR); and Suhwan Kim, Seoul (KR)
Assigned to Seoul National University R&DB Foundation, Seoul (KR)
Filed by Seoul National University R&DB Foundation, Seoul (KR)
Filed on Apr. 11, 2022, as Appl. No. 17/717,929.
Claims priority of application No. 10-2021-0047184 (KR), filed on Apr. 12, 2021.
Prior Publication US 2022/0326378 A1, Oct. 13, 2022
Int. Cl. G01S 17/04 (2020.01); H03M 1/56 (2006.01); H03K 5/24 (2006.01)
CPC G01S 17/04 (2020.01) [H03M 1/56 (2013.01); H03K 5/2481 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a bias generating circuit configured to sample a bias voltage according to a reset signal; and
a current source configured to provide a bias current according to the bias voltage,
wherein the bias generating circuit includes:
a PMOS transistor having a gate and a drain coupled in common; and
a bias sampling capacitor; and
a switch configured to couple a gate of the PMOS transistor and the bias sampling capacitor according to the reset signal.