US 12,188,895 B2
Nanopore transistor for biosensing
David Barge, Schaerbeek (BE); Bert Du Bois, Blanden (BE); Simone Severi, Leuven (BE); and Ashesh Ray Chaudhuri, Heverlee (BE)
Assigned to IMEC VZW, Leuven (BE)
Filed by IMEC VZW, Leuven (BE)
Filed on Mar. 11, 2022, as Appl. No. 17/692,717.
Claims priority of application No. 21168769 (EP), filed on Apr. 16, 2021.
Prior Publication US 2022/0334079 A1, Oct. 20, 2022
Int. Cl. H01L 21/00 (2006.01); G01N 27/414 (2006.01)
CPC G01N 27/4145 (2013.01) [G01N 27/4146 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for forming a nanopore transistor for biosensing, the method comprising:
(a) forming an aperture in a filler material by:
(i) providing a fin structure comprising at least a bottom semiconductor layer and a top layer;
(ii) patterning the top layer to form a pillar;
(iii) laterally embedding the pillar in the filler material;
(iv) forming the aperture in the filler material by removing the pillar;
(v) lining the aperture with a spacer material, thereby reducing a size of the aperture;
(b) forming a nanopore in the bottom semiconductor layer by etching through the aperture;
(c) lining the nanopore with a gate dielectric material, thereby forming a gate dielectric; and
(d) forming a source and a drain by either:
(i) between steps a.ii and a.iii, doping the bottom semiconductor layer by ion implantation using the pillar as a mask, or
(ii) after step b,
filling the aperture with a sealing material so that the sealing material is coplanar with the filler material, thereby forming a post comprising the sealing material and the spacer material;
removing the filler material selectively with respect to the post, thereby exposing a part of the bottom semiconductor layer;
doping the bottom semiconductor layer by ion implantation by using the post as a mask; and
removing the sealing material.