US 12,188,839 B2
Sensor device including sensor unit for a gaseous medium
Rainer Leuschner, Regensburg (DE); Kerstin Kaemmer, Radebeul (DE); Roland Meier, Regensburg (DE); Marten Oldsen, Anzing (DE); and Karolina Zogal, Regensburg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Apr. 21, 2023, as Appl. No. 18/304,989.
Application 18/304,989 is a division of application No. 17/024,228, filed on Sep. 17, 2020, granted, now 11,774,308.
Application 17/024,228 is a division of application No. 15/808,044, filed on Nov. 9, 2017, granted, now 10,859,457, issued on Dec. 8, 2020.
Claims priority of application No. 102016121683.6 (DE), filed on Nov. 11, 2016.
Prior Publication US 2023/0251154 A1, Aug. 10, 2023
Int. Cl. G01L 9/00 (2006.01); G01N 33/00 (2006.01)
CPC G01L 9/0073 (2013.01) [G01L 9/0042 (2013.01); G01N 33/0027 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a sensor device, the method comprising:
forming a sensor unit sensitive for a property of a gaseous medium on a front surface of a semiconductor substrate;
forming a frame structure on the front surface, wherein the frame structure comprises a first loop portion laterally surrounding a first area comprising the sensor unit, a second loop portion laterally surrounding a second area, and a connection portion connecting the first loop portion with the second loop portion to form a communicating channel between the first and second areas;
forming a lid structure on the frame structure; and
forming, in the lid structure, a lid opening exposing the second area.