US 12,188,146 B2
Methods and systems for controlling crystal growth
Yu Wang, Meishan (CN); Weiming Guan, Meishan (CN); and Zhenxing Liang, Meishan (CN)
Assigned to MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Meishan (CN)
Filed by MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Sichuan (CN)
Filed on Apr. 9, 2021, as Appl. No. 17/227,256.
Application 17/227,256 is a continuation of application No. PCT/CN2021/071114, filed on Jan. 11, 2021.
Prior Publication US 2022/0220630 A1, Jul. 14, 2022
Int. Cl. C30B 15/20 (2006.01); C30B 15/26 (2006.01); C30B 15/28 (2006.01); C30B 35/00 (2006.01); G05B 15/02 (2006.01)
CPC C30B 15/20 (2013.01) [C30B 15/26 (2013.01); C30B 15/28 (2013.01); C30B 35/00 (2013.01); G05B 15/02 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method for controlling crystal growth, comprising:
obtaining an actual crystal parameter in a target time slice, wherein the actual crystal parameter includes at least one of an actual crystal mass, an actual crystal diameter, an actual crystal height, or an actual crystal shape;
obtaining a reference crystal parameter in the target time slice, wherein the reference crystal parameter includes at least one of a reference crystal mass, a reference crystal diameter, a reference crystal height, or a reference crystal shape, wherein the obtaining a reference crystal parameter in the target time slice comprises:
constructing a crystal growth model based on a preset crystal parameter and a preset crystal growth parameter, and at least one of parameters involved in a crystal growth process including an internal stress, an internal defect, an internal component distribution, a continuity of different crystal growth stages, wherein the crystal growth model characterizes a theoretical growth condition of the crystal in an entire growth process; and
determining the reference crystal parameter corresponding to the target time slice based on the crystal growth model;
determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter;
determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and
adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter;
wherein the method further comprises:
obtaining a real-time image during a process of dropping the seed crystal;
comparing the real-time image with a preset reference image, including:
dividing the preset reference image and the real-time image into a plurality of corresponding regions, respectively;
for each region, comparing real-time image information with corresponding preset reference image information to determine a similarity, the image information including at least one of a size of a meniscus, a brightness of the meniscus, a size of a meniscus aperture, or a flow range of a flow line of a raw material liquid;
in response to that the similarity is greater than a preset similarity threshold, determining that there is no need to adjust the heating parameter; and
in response to that the similarity is less than or equal to the preset similarity threshold, adjusting the heating parameter.