US 12,188,124 B2
Substrate processing apparatus, gas nozzle and method of manufacturing semiconductor device
Yuji Takebayashi, Toyama (JP); Unryu Ogawa, Toyama (JP); Toshiki Fujino, Toyama (JP); Yukihito Hada, Toyama (JP); and Naoko Tsunoda, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Sep. 1, 2020, as Appl. No. 17/009,218.
Application 17/009,218 is a continuation of application No. PCT/JP2019/008379, filed on Mar. 4, 2019.
Claims priority of application No. 2018-063255 (JP), filed on Mar. 28, 2018.
Prior Publication US 2020/0392625 A1, Dec. 17, 2020
Int. Cl. C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/48 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC C23C 16/45565 (2013.01) [C23C 16/4587 (2013.01); C23C 16/483 (2013.01); C23C 16/52 (2013.01); H01L 21/02181 (2013.01); H01L 21/67017 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a reaction tube constituted by a first material and capable of accommodating a substrate;
a substrate retainer configured to be capable of supporting a plurality of substrates comprising the substrate vertically in a horizontal orientation in a multistage manner; and
a source gas nozzle provided in the reaction tube, wherein at least a part of the source gas nozzle is constituted by a second material whose reflectance is higher than that of the first material and whose surface is rougher with bubbles contained therein than that of the first material, and a source gas is supplied through the source gas nozzle,
wherein the source gas nozzle extends at least from a lower end to an upper end of a substrate region in which the plurality of the substrates are arranged, a downstream portion of the source gas nozzle including a downstream end of the source gas nozzle comprises the second material, an upstream portion of the source gas nozzle located more upstream than the downstream portion of the source gas nozzle comprises the first material, and the first material and the second material are provided with a plurality of supply holes configured to supply the source gas into the reaction tube throughout a range from an upper portion of the reaction tube to a lower portion of the reaction tube.