US 12,188,123 B2
Deposition of iodine-containing carbon films
Phong Nguyen, Newark, DE (US); Fabrizio Marchegiani, Newark, DE (US); Nathan Stafford, Damascus, OR (US); and Xiangyu Guo, Bear, DE (US)
Assigned to American Air Liquide, Inc., Fremont, CA (US)
Filed by American Air Liquide, Inc., Fremont, CA (US)
Filed on Dec. 17, 2021, as Appl. No. 17/555,140.
Prior Publication US 2023/0193460 A1, Jun. 22, 2023
Int. Cl. C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/56 (2006.01)
CPC C23C 16/45534 (2013.01) [C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); C23C 16/505 (2013.01); C23C 16/56 (2013.01)] 8 Claims
 
1. A method for depositing an iodine-containing film on a substrate material, the method comprising:
a) exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor selected from C6H5I, C6H4I2, IF3, IF5, and IF7;
b) exposing the substrate material to a vapor of a co-reactant C3HF4N sequentially or simultaneously with the step a); and
c) depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method.
 
7. A method for depositing an iodine-containing and nitrogen-containing film on a substrate material, the method comprising:
a) sequentially or simultaneously exposing the substrate material to a vapor of a film-forming composition and a vapor of a nitrogen-containing molecule,
wherein the film-forming composition comprises an iodine-containing precursor selected from C6H5I, C6H4I2, IF3, IF5, and IF7,
wherein the nitrogen-containing molecule has a general formula CmHnFoNHb or CmHnFoN—R1 where m=1-6, n=0-13, o=0-13, b=0-2, and R1 is a C1-C5 hydrocarbon; and
b) depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a thermal or plasma method,
wherein the step b) comprises modifying the substrate material or doping iodine into the substrate material.