US 12,188,121 B2
Method of depositing silicon oxide films
Tae Ho Yoon, Anseong-si (KR); Hyung Sang Park, Seoul-si (KR); and Yong Min Yoo, Cheonan-si (KR)
Assigned to ASM Genitech Korea Ltd., Hwaseong-Si (KR)
Filed by ASM Korea Ltd., Gyeonggi-do (KR)
Filed on Jan. 25, 2022, as Appl. No. 17/583,544.
Application 17/583,544 is a continuation of application No. 16/822,390, filed on Mar. 18, 2020, granted, now 11,261,523.
Application 16/822,390 is a continuation of application No. 12/178,300, filed on Jul. 23, 2008, abandoned.
Claims priority of application No. 10-2007-0080581 (KR), filed on Aug. 10, 2007.
Prior Publication US 2022/0145452 A1, May 12, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/40 (2006.01); C01B 33/113 (2006.01); C04B 35/14 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 23/535 (2006.01); H01L 23/64 (2006.01)
CPC C23C 16/402 (2013.01) [C01B 33/113 (2013.01); C04B 35/14 (2013.01); C23C 16/401 (2013.01); C23C 16/4408 (2013.01); C23C 16/45542 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/76229 (2013.01); H01L 23/535 (2013.01); H01L 23/647 (2013.01); Y10T 428/31504 (2015.04)] 25 Claims
OG exemplary drawing
 
1. A method of forming a shallow trench isolation structure comprising a liner layer, wherein the liner layer comprises a silicon oxide film having a refractive index (RI) from 1.457 to 1.483, and wherein the silicon oxide film was made by a plasma enhanced atomic layer deposition (PEALD) process.