	US 12,188,120 B2
	Method of forming compound structure with 2-dimensional structure
Jungwon Park, Seoul (KR); and Jihoon Kim, Seoul (KR)
Assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR); and INSTITUTE FOR BASIC SCIENCE, Daejeon (KR)
Filed by SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR); and INSTITUTE FOR BASIC SCIENCE, Daejeon (KR)
Filed on Oct. 19, 2022, as Appl. No. 18/047,970.
Claims priority of application No. 10-2021-0143315 (KR), filed on Oct. 26, 2021.
Prior Publication US 2023/0175122 A1, Jun. 8, 2023
Int. Cl. C23C 16/30 (2006.01); C23C 16/02 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01)

CPC C23C 16/305 (2013.01) [C23C 16/0272 (2013.01); C23C 16/4582 (2013.01); C23C 16/46 (2013.01)]

9 Claims

1. A method of forming a compound structure comprising:

loading a metal precursor on a substrate;

providing a chalcogen precursor to the substrate; and

reacting the chalcogen precursor with the metal precursor,

wherein the metal precursor comprises transition metal nanoparticles,

wherein the compound structure has a 2-dimensional structure,

wherein the providing the chalcogen precursor to the substrate comprises disposing the substrate and the chalcogen precursor in a furnace and providing carrier gas to the furnace, and

wherein the chalcogen precursor is supplied to the substrate by the carrier gas,

wherein the furnace comprises a first furnace and a second furnace that are heated independently of each other, and

wherein the chalcogen precursor is disposed in the first furnace, the substrate is disposed in the second furnace, and the carrier gas flows from the first furnace to the second furnace.