	US 12,188,118 B2
	Potassium sodium niobate sputtering target and production method thereof
Ryosuke Sakashita, Ibaraki (JP); Hiroshi Takamura, Ibaraki (JP); Atsushi Nara, Ibaraki (JP); and Ryo Suzuki, Tokyo (JP)
Assigned to JX ADVANCED METALS CORPORATION, Tokyo (JP)
Filed by JX Metals Corporation, Tokyo (JP)
Filed on Oct. 27, 2023, as Appl. No. 18/384,430.
Application 18/384,430 is a continuation of application No. 16/956,056, granted, now 11,851,747, previously published as PCT/JP2019/005478, filed on Feb. 15, 2019.
Claims priority of application No. 2018-036786 (JP), filed on Mar. 1, 2018.
Prior Publication US 2024/0052478 A1, Feb. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 14/34 (2006.01); C01G 33/00 (2006.01); C04B 35/495 (2006.01); H01J 37/34 (2006.01)

CPC C23C 14/3414 (2013.01) [C01G 33/006 (2013.01); C04B 35/495 (2013.01); H01J 37/3426 (2013.01); C01P 2002/60 (2013.01); C01P 2006/10 (2013.01); C01P 2006/40 (2013.01); C01P 2006/90 (2013.01)]

2 Claims

1. A potassium sodium niobate sputtering target comprising, a relative density is 98% or higher, and a volume resistivity is exceeding 500 kΩcm, and a content ratio of potassium, sodium and niobium is Nb:K:Na=1.0:X:1−X, wherein X is 0.3≤X, in terms of atomic ratio, a flexural strength is 50 MPa or more, and an average crystal grain size is 1 to 20 μm.