US 12,187,942 B2
Cadmium free quantum dot including lithium, production method thereof, and electronic device including the same
Yong Wook Kim, Yongin-si (KR); Eun Joo Jang, Suwon-si (KR); Hyo Sook Jang, Suwon-si (KR); Soo Kyung Kwon, Suwon-si (KR); Seon-Yeong Kim, Suwon-si (KR); and Ji-Yeong Kim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 7, 2023, as Appl. No. 18/297,033.
Application 18/297,033 is a continuation of application No. 16/851,520, filed on Apr. 17, 2020, granted, now 11,739,263.
Claims priority of application No. 10-2019-0045758 (KR), filed on Apr. 18, 2019.
Prior Publication US 2023/0250336 A1, Aug. 10, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C09K 11/88 (2006.01); C09K 11/02 (2006.01); C09K 11/08 (2006.01); C09K 11/56 (2006.01); F21V 8/00 (2006.01); G02F 1/13357 (2006.01); H10K 59/12 (2023.01); H10K 59/38 (2023.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01)
CPC C09K 11/883 (2013.01) [C09K 11/025 (2013.01); C09K 11/0805 (2013.01); C09K 11/562 (2013.01); C09K 11/88 (2013.01); G02B 6/005 (2013.01); G02F 1/133617 (2013.01); H10K 59/12 (2023.02); H10K 59/38 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A cadmium free quantum dot comprising:
zinc, tellurium, and selenium, and
lithium,
wherein the cadmium free quantum dot does not comprise an indium phosphide,
wherein the cadmium free quantum dot has a quantum efficiency of greater than or equal to about 5%, and wherein a mole ratio of tellurium to selenium (Te:Se) is greater than or equal to 1:1 and less than or equal to about 4:1.