US 12,187,939 B2
Quantum dots, production method thereof, and composite and electronic device including the same
Jihyun Min, Seoul (KR); Seon-Yeong Kim, Suwon-si (KR); Eun Joo Jang, Suwon-si (KR); Hyo Sook Jang, Suwon-si (KR); Soo Kyung Kwon, Suwon-si (KR); and Yong Wook Kim, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 4, 2023, as Appl. No. 18/130,453.
Application 18/130,453 is a continuation of application No. 16/519,188, filed on Jul. 23, 2019, granted, now 11,634,628.
Claims priority of application No. 10-2018-0085495 (KR), filed on Jul. 23, 2018.
Prior Publication US 2023/0250333 A1, Aug. 10, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C09K 11/70 (2006.01); C09K 11/62 (2006.01); C09K 11/88 (2006.01); H01L 29/12 (2006.01); H10K 59/38 (2023.01)
CPC C09K 11/70 (2013.01) [C09K 11/62 (2013.01); C09K 11/883 (2013.01); H01L 29/122 (2013.01); H10K 59/38 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A quantum dot, comprising
a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core,
wherein the quantum dot does not comprise cadmium,
the core comprises a Group III-V compound comprising a Group III metal and a Group V element,
the quantum dot has a maximum photoluminescence peak in a green light wavelength region,
a full width at half maximum of the maximum photoluminescence peak is less than about 50 nanometers,
a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers,
wherein in the quantum dot, a mole ratio of selenium to sulfur (Se:S) is greater than or equal to about 0.80:1 and less than or equal to 1.30:1,
wherein in the quantum dot a mole ratio of phosphorus to indium is greater than or equal to about 0.6:1 and less than or equal to about 0.9:1.