US 12,187,651 B2
Silicon nitride sintered body, silicon nitride substrate, and silicon nitride circuit board
Katsuyuki Aoki, Yokohama Kanagawa (JP); Kentaro Iwai, Yokohama Kanagawa (JP); Takayuki Fukasawa, Yokohama Kanagawa (JP); Jun Momma, Yokohama Kanagawa (JP); and Takashi Sano, Fujisawa Kanagawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA MATERIALS CO., LTD., Yokohama (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA MATERIALS CO., LTD., Yokohama (JP)
Filed on Dec. 10, 2020, as Appl. No. 17/117,291.
Application 17/117,291 is a continuation of application No. PCT/JP2019/029722, filed on Jul. 30, 2019.
Claims priority of application No. 2018-146359 (JP), filed on Aug. 3, 2018.
Prior Publication US 2021/0122680 A1, Apr. 29, 2021
Int. Cl. C04B 35/587 (2006.01); H01L 23/00 (2006.01); H01L 23/14 (2006.01); H01L 23/15 (2006.01); H01L 23/373 (2006.01); H05K 1/03 (2006.01)
CPC C04B 35/587 (2013.01) [H01L 23/14 (2013.01); H01L 23/15 (2013.01); H01L 23/3735 (2013.01); H01L 23/3736 (2013.01); H05K 1/0306 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/786 (2013.01); C04B 2235/85 (2013.01); C04B 2235/9607 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/73265 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A silicon nitride sintered body comprising silicon nitride crystal grains and a grain boundary phase,
dislocation defect portions existing inside at least some of the silicon nitride crystal grains,
a percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in a 50 μm×50 μm observation region of any cross section or surface being not less than 80% and not more than 100%,
a percentage of a number of the silicon nitride crystal grains having an occupied area ratio of the dislocation defect portion of 10% or less among the number of the at least some of the silicon nitride crystal grains being 80% or more.