US 12,187,617 B2
Method and apparatus for removal of surface carbon from polysilicon
James J. Mueller, Saginaw, MI (US); Brian S. Cichowski, Saginaw, MI (US); Mark Loboda, Bay City, MI (US); James C. Mundell, Saginaw, MI (US); Christopher S. Robinson, Saginaw, MI (US); and Vasgen A. Shamamian, Midland, MI (US)
Assigned to HEMLOCK SEMICONDUCTOR OPERATIONS LLC, Hemlock, MI (US)
Filed by HEMLOCK SEMICONDUCTOR OPERATIONS LLC, Hemlock, MI (US)
Filed on Oct. 7, 2020, as Appl. No. 17/064,789.
Claims priority of provisional application 62/924,222, filed on Oct. 22, 2019.
Prior Publication US 2021/0114885 A1, Apr. 22, 2021
Int. Cl. C01B 33/037 (2006.01); B08B 5/02 (2006.01)
CPC C01B 33/037 (2013.01) [B08B 5/023 (2013.01); C01P 2004/03 (2013.01); C01P 2004/60 (2013.01); C01P 2006/80 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method comprising
providing a feed stream comprising polycrystalline silicon having surface carbon contamination in an initial amount,
subjecting the polycrystalline silicon in the feed stream to a high velocity fluid of at least 1 m/s, wherein the fluid is selected from gas, gas/liquid mixtures, gas/solid mixtures, and gas/solid/liquid mixtures to form a product stream comprising polycrystalline silicon having surface carbon contamination in a reduced amount of less than 250 parts per billion by weight, or the reduced amount is at least 20% less than the initial amount, or both.