| CPC B81C 1/00063 (2013.01) [B81C 1/00412 (2013.01); B81C 2201/013 (2013.01); B81C 2201/053 (2013.01)] | 7 Claims |
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1. A method for manufacturing a micromechanical structure in a structural layer of a wafer by forming a first gap and a second gap in the structural layer so that the first gap has a first gap width and the second gap has a second gap width, wherein the second gap width is greater than the first gap width, and the method comprises:
depositing and patterning a first etching mask and a second etching mask on a horizontal face of the structural layer, wherein
the first etching mask has a first opening which defines the location and dimensions of the first gap, so that the width of the first opening is equal to the first gap width and the first opening forms a first unprotected area,
the first etching mask has a second opening which defines the location and dimensions of the second gap, so that the width of the second opening is equal to the second gap width, and wherein
the second etching mask comprises a load-reducing part within the second opening in the first etching mask, so that the load-reducing part divides the second opening into a temporarily protected area which is covered by the load-reducing part and at least one second unprotected area which is not covered by the load-reducing part, wherein the width of the at least one second unprotected area is substantially equal to the width of the first opening;
etching trenches through the structural layer in the first and second unprotected areas which are not protected by the first etching mask or the second etching mask;
coating at least the sidewalls of the trenches with a protective layer and removing the second etching mask at least from the second opening in the first etching mask, so that the temporarily protected area is exposed; and
etching away the structural layer in the exposed temporarily protected area.
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