CPC C01B 32/182 (2017.08) [B01J 19/18 (2013.01); B01J 19/245 (2013.01); C01B 32/05 (2017.08); C01B 32/184 (2017.08); C01B 32/186 (2017.08); C23C 16/0209 (2013.01); C23C 16/26 (2013.01); B82Y 40/00 (2013.01); C01B 2204/02 (2013.01)] | 19 Claims |
1. A method for forming graphene, said method comprising:
disposing, on a laterally extending substrate holder, a laterally extending substrate sheet having located thereon a first surface for processing and a second surface for processing, wherein said second surface for processing is located a positive lateral distance from said first surface for processing;
scavenging, in presence of a substrate gas scavenging composition in one or more infeed tunnels disposed adjacent to said substrate holder, a substrate gas present in and around said first surface for processing to produce a substrate gas depleted surface; and
annealing, in presence of an annealing gas composition and at an annealing temperature in one or more processing sub-enclosures disposed laterally adjacent to said one or more infeed tunnels, said second surface for processing to produce an annealed surface, wherein said annealing temperature is produced using one or more heat sources being disposed adjacent to said second surface for processing, and
wherein some of said heat, resulting from said annealing temperature and said annealing gas composition, flows from said one or more processing sub-enclosures towards said first surface for processing and facilitates production of said substrate gas depleted surface in said one or more infeed tunnels.
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