	US 11,856,858 B2
	Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films
Craig Moe, Penfield, NY (US); Jeffrey M. Leathersich, Rochester, NY (US); and Arthur E. Geiss, Greensboro, NC (US)
Assigned to Akoustis, Inc., Huntersville, NC (US)
Filed by Akoustis, Inc., Huntersville, NC (US)
Filed on Aug. 2, 2019, as Appl. No. 16/530,425.
Application 16/530,425 is a continuation in part of application No. 16/513,143, filed on Jul. 16, 2019, granted, now 11,411,168.
Application 16/513,143 is a continuation in part of application No. 15/784,919, filed on Oct. 16, 2017, granted, now 10,355,659, issued on Jul. 16, 2019.
Claims priority of provisional application 62/846,558, filed on May 10, 2019.
Prior Publication US 2020/0111949 A1, Apr. 9, 2020
Int. Cl. H10N 30/076 (2023.01); C23C 14/02 (2006.01); H03H 3/02 (2006.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01); C23C 14/06 (2006.01); H10N 30/88 (2023.01); H10N 30/853 (2023.01); H03H 9/56 (2006.01); H03H 9/02 (2006.01)

CPC H10N 30/076 (2023.02) [C23C 14/02 (2013.01); C23C 14/0617 (2013.01); C23C 14/34 (2013.01); H01J 37/3426 (2013.01); H03H 3/02 (2013.01); H10N 30/853 (2023.02); H10N 30/88 (2023.02); H01J 2237/332 (2013.01); H03H 9/02015 (2013.01); H03H 9/562 (2013.01); H03H 2003/023 (2013.01)]

14 Claims

1. A piezoelectric film comprising:

an aluminum nitride material doped with a first element E1 selected from group II, a second element E2 selected from group IVB, and a third element E3 selected from a group consisting of Si, Ga, and In to provide the aluminum nitride material with a doped concentration of E1 and E2 in a range between about 1 atom % and about 30 atom % and a doped concentration of E3 of about 20 atom %,

wherein a number of atoms of E1 plus a number of atoms of E2 plus a number of atoms of aluminum plus a number of atoms of E3 is 100%, and

wherein the aluminum nitride material has a crystallinity of less than about 1.5 degrees Full Width Half Maximum (FWHM) by x-ray diffraction.