US 11,856,799 B2
Semiconductor devices, hybrid transistors, and related methods
Kamal M. Karda, Boise, ID (US); Haitao Liu, Boise, ID (US); and Durai Vishak Nirmal Ramaswamy, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 23, 2021, as Appl. No. 17/182,953.
Application 17/182,953 is a division of application No. 16/118,110, filed on Aug. 30, 2018, granted, now 10,943,953.
Claims priority of provisional application 62/552,824, filed on Aug. 31, 2017.
Prior Publication US 2021/0183951 A1, Jun. 17, 2021
Int. Cl. H01L 21/8234 (2006.01); H10B 63/00 (2023.01); G11C 13/00 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); G11C 5/12 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); G11C 11/401 (2006.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01)
CPC H10B 63/84 (2023.02) [G11C 5/12 (2013.01); G11C 13/0002 (2013.01); H01L 21/823487 (2013.01); H01L 27/1225 (2013.01); H01L 29/4908 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/7827 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H10B 63/22 (2023.02); H10B 63/24 (2023.02); H10B 63/34 (2023.02); H10N 70/011 (2023.02); H10N 70/245 (2023.02); H10N 70/828 (2023.02); H10N 70/841 (2023.02); H10N 70/883 (2023.02); G11C 11/1659 (2013.01); G11C 11/2259 (2013.01); G11C 11/401 (2013.01); G11C 13/003 (2013.01); G11C 2213/79 (2013.01); H01L 29/78618 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming a hybrid transistor supported by a substrate comprising:
forming a source including a first low bandgap high mobility material;
forming a channel including a high bandgap low mobility material coupled with the first low bandgap high mobility material;
forming a drain including a second low bandgap high mobility material coupled with the high bandgap low mobility material; and
forming a gate separated from the channel via a gate oxide material,
wherein forming the channel includes forming the high bandgap low mobility material to have a length that is shorter than a length of the gate.