US 11,856,798 B2
Resistive random-access memory random number generator
Guy M. Cohen, Westchester, NY (US); Takashi Ando, Eastchester, NY (US); and Nanbo Gong, White Plains, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Mar. 1, 2022, as Appl. No. 17/652,970.
Prior Publication US 2023/0284462 A1, Sep. 7, 2023
Int. Cl. G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H03K 3/84 (2006.01)
CPC H10B 63/80 (2023.02) [G11C 13/0002 (2013.01); H03K 3/84 (2013.01); H10N 70/021 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A random number generator, comprising:
a plurality of resistive random-access memory (RRAM) devices,
wherein each RRAM device includes:
a first electrode;
a second electrode;
a third electrode located between the first and second electrode;
at least one electrically insulating layer separating the first electrode and the second electrode from the third electrode, wherein the at least one electrically insulating layer has a substantially uniform thickness;
a first filament that is current conducting and extends through the at least one electrically insulating layer;
a second filament is located in the at least one electrically insulating layer and does not extend through the at least one electrically insulating layer;
a voltage source configured to apply voltage to at least one of the first electrode and the second electrode; and
a voltage sensor configured to sense voltage of the third electrode in order to determine which one of the first filament or the second filament is more resistive.