CPC H10B 63/80 (2023.02) [G11C 13/0002 (2013.01); H03K 3/84 (2013.01); H10N 70/021 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02)] | 20 Claims |
1. A random number generator, comprising:
a plurality of resistive random-access memory (RRAM) devices,
wherein each RRAM device includes:
a first electrode;
a second electrode;
a third electrode located between the first and second electrode;
at least one electrically insulating layer separating the first electrode and the second electrode from the third electrode, wherein the at least one electrically insulating layer has a substantially uniform thickness;
a first filament that is current conducting and extends through the at least one electrically insulating layer;
a second filament is located in the at least one electrically insulating layer and does not extend through the at least one electrically insulating layer;
a voltage source configured to apply voltage to at least one of the first electrode and the second electrode; and
a voltage sensor configured to sense voltage of the third electrode in order to determine which one of the first filament or the second filament is more resistive.
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