CPC H10B 53/30 (2023.02) [H01L 21/02164 (2013.01); H01L 21/28088 (2013.01); H01L 21/28097 (2013.01); H01L 28/55 (2013.01); H01L 28/60 (2013.01); H01L 29/40111 (2019.08); H01L 29/4966 (2013.01); H01L 29/4975 (2013.01); H01L 29/516 (2013.01); H01L 29/517 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09); H10B 51/30 (2023.02)] | 9 Claims |
1. A ferroelectric field effect transistor, comprising:
a pair of source/drain regions having a semiconductive channel therebetween; and
a gate structure comprising:
a ferroelectric gate insulator material comprising one or more members of the group consisting of zirconium, zirconium oxide, hafnium, hafnium oxide, lead zirconium titanate, tantalum oxide, strontium oxide, and strontium titanium oxide;
a conductive gate electrode; and
a composite stack comprising at least two non-ferroelectric metal oxide compositions, the composite stack having three or more discrete layers including a first layer, a second layer and a third layer with the second layer being in direct physical contact with the first and third layers and with at least one of the layers comprised by the composite stack containing a metal oxide selected from the group consisting of ScOx, Sc2O3, YOx, Y2O3, MgOx, MgO, SrOx, SrO, NbOx, GdOx, MoOx, RuOx, LaOx, VxOy, IrOx, CrOx, ZnOx, PrOx, CeOx, SmOx, and LuOx, the composite stack having an overall conductivity that is less than a conductivity of the conductive gate electrode.
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