US 11,855,197 B2
Vertical bipolar transistors
Shesh Mani Pandey, Saratoga Springs, NY (US); Alexander M. Derrickson, Saratoga Springs, NY (US); Judson R. Holt, Ballston Lake, NY (US); and Vibhor Jain, Williston, VT (US)
Assigned to GLOBALFOUNDRIES U.S. INC., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Jan. 20, 2022, as Appl. No. 17/580,127.
Prior Publication US 2023/0231041 A1, Jul. 20, 2023
Int. Cl. H01L 29/737 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7371 (2013.01) [H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/66234 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A structure comprising:
an intrinsic base region comprising semiconductor-on-insulator material;
a collector region confined within an insulator layer beneath the semiconductor-on-insulator material;
an emitter region above the intrinsic base region;
an extrinsic base region above the intrinsic base region; and
sidewall spacers separating the extrinsic base region from the emitter region, and a collector contact region extending vertically upwards from the collector region.