US 11,855,139 B2
Extended drain field effect transistor with trench gate(s) and method
Ketankumar Harishbhai Tailor, Dresden (DE)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Jan. 10, 2022, as Appl. No. 17/571,611.
Prior Publication US 2023/0223437 A1, Jul. 13, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/0653 (2013.01) [H01L 29/4236 (2013.01); H01L 29/66704 (2013.01); H01L 29/7825 (2013.01); H01L 29/7835 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a semiconductor layer; and
a transistor comprising:
a first well in the semiconductor layer and having a first type conductivity;
a second well in the semiconductor layer positioned laterally adjacent to the first well and having a second type conductivity that is different from the first type conductivity;
a trench gate structure in the second well and physically separated from a junction between the first well and the second well; and
a primary gate structure on the semiconductor layer traversing the junction,
wherein gate conductor materials of the trench gate structure and the primary gate structure are physically separated by a gate dielectric material.