CPC H01L 25/50 (2013.01) [H01L 21/187 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 24/27 (2013.01); H01L 24/30 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 2224/83011 (2013.01); H01L 2224/83013 (2013.01)] | 32 Claims |
1. A method of forming a microelectronic assembly, the method comprising:
preparing a bonding surface of a first substrate;
preparing a bonding surface of a second substrate;
mounting the second substrate to a dicing support structure;
singulating the second substrate into a plurality of dies while the second substrate is mounted to the dicing support structure, each die of the plurality of dies having a bonding surface comprising a portion of the bonding surface of the second substrate;
activating the bonding surface of the first substrate; and
directly bonding the bonding surface of a die of the plurality of dies to the bonding surface of the first substrate without an adhesive,
wherein the bonding surface of the die is not activated before directly bonding and while the die is mounted to the dicing support structure.
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