US 11,855,019 B2
Method of forming a sensor device
Ee Jan Khor, Singapore (SG); Juan Boon Tan, Singapore (SG); and Ramasamy Chockalingam, Singapore (SG)
Assigned to GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Feb. 11, 2021, as Appl. No. 17/173,237.
Prior Publication US 2022/0252534 A1, Aug. 11, 2022
Int. Cl. H01L 23/00 (2006.01); G01N 27/22 (2006.01)
CPC H01L 24/05 (2013.01) [G01N 27/225 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/0382 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming a plurality of electrodes and a bond pad in a dielectric region, wherein the plurality of electrodes is located in a first device region and the bond pad is located in a second device region;
forming a passivation layer on each electrode in the plurality of electrodes and the bond pad;
forming a barrier layer on the passivation layer;
forming a plurality of trenches that extend through the barrier layer and into the dielectric region, the forming of the trenches simultaneously exposing an upper surface of the bond pad; and
forming a moisture sensitive dielectric layer on the barrier layer, wherein the forming of the moisture sensitive dielectric layer also fills the trenches to form a plurality of projections, each projection being formed between two electrodes in the plurality of electrodes.