US 11,855,005 B2
Crackstop with embedded passive radio frequency noise suppressor and method
Nicholas A. Polomoff, Hopewell Junction, NY (US); Frank G. Kuechenmeister, Dresden (DE); Richard F. Taylor, III, Campbell, CA (US); and Saquib B. Halim, Gmund am Tegernsee (DE)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Jun. 21, 2021, as Appl. No. 17/352,414.
Prior Publication US 2022/0406732 A1, Dec. 22, 2022
Int. Cl. G06F 30/392 (2020.01); H01L 23/66 (2006.01); H03H 1/00 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/562 (2013.01) [G06F 30/392 (2020.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01); H01L 23/66 (2013.01); H03H 1/0007 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A structure comprising:
a substrate comprising a center portion and an edge portion;
an integrated circuit area on the center portion; and
multiple metallic barriers on the edge portion comprising:
a first metallic barrier laterally surrounding and physically separated from the integrated circuit area;
a second metallic barrier laterally surrounding the first metallic barrier; and
a passive filter comprising at least one electromagnetic device, wherein the passive filter is any of embedded in the first metallic barrier, embedded in the second metallic barrier, embedded in both the first metallic barrier and the second metallic barrier, and embedded in a space between the first metallic barrier and the second metallic barrier and wherein the passive filter inhibits radio frequency noise signal propagation through the metallic barriers between different locations in the integrated circuit area,
wherein the first metallic barrier is on a first well region in the substrate and the second metallic barrier is on a second well region in the substrate and having a different type conductivity than the first well region.