CPC H01L 23/5222 (2013.01) [B81B 7/0074 (2013.01); B81B 7/02 (2013.01); B81C 1/0015 (2013.01); B81C 1/00269 (2013.01); B81C 3/001 (2013.01); B81C 3/008 (2013.01); H01L 21/486 (2013.01); H01L 21/4807 (2013.01); H01L 28/40 (2013.01); B81B 2201/01 (2013.01); H01L 23/642 (2013.01); H01L 2021/60015 (2013.01)] | 20 Claims |
1. A method, comprising:
obtaining an active feature layer having a first surface bearing one or more active feature areas;
forming a first capacitor plate of a first capacitor on an interior surface of a cap, wherein the cap includes at least one of a silicon-based ceramic, an aluminum-based ceramic, or a tantalum-based ceramic;
forming a second capacitor plate of the first capacitor on an exterior surface of the cap, wherein the first capacitor plate of the first capacitor overlays and is spaced apart from the second capacitor plate of the first capacitor along a direction that is orthogonal to the exterior surface of the cap to form the first capacitor;
forming a first capacitor plate of a second capacitor on the interior surface of the cap, wherein the first capacitor plate of the second capacitor is at a different, spaced-apart location from the first capacitor plate of the first capacitor on the interior surface of the cap;
forming a second capacitor plate of the second capacitor on an exterior surface of the cap, wherein the first capacitor plate of the second capacitor overlays and is spaced apart from the first capacitor plate of the second capacitor along a direction that is orthogonal to the exterior surface of the cap to form the second capacitor;
coupling the cap with the first surface of the active feature layer such that the second capacitor plate of the first capacitor is in electrical communication with at least a first active feature of the active feature layer and such that the second capacitor plate of the second capacitor is in electrical communication with at least a second active feature of the active feature layer; and
bonding the cap with a passive layer substrate.
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