US 11,854,770 B2
Plasma processing with independent temperature control
Wei Liu, San Jose, CA (US); Vladimir Nagorny, Tracy, CA (US); and Rene George, San Carlos, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jan. 14, 2021, as Appl. No. 17/149,232.
Prior Publication US 2022/0223381 A1, Jul. 14, 2022
Int. Cl. H01L 21/3105 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)
CPC H01J 37/32449 (2013.01) [H01J 37/321 (2013.01); H01J 37/32357 (2013.01); H01J 37/32724 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01J 2237/334 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A plasma processing method comprising:
introducing a first process gas into a region of a plasma source from an outlet of one or more peripheral channels in fluid connection with one or more peripheral injection ports of the plasma source and a second process gas into the region from a center channel in fluid connection with a center gas injection port of the plasma source, the center channel being fluidly isolated from the peripheral channels upstream of the region, wherein the center channel is disposed within a gas injection insert and fluidly coupled to a first gas distribution plenum, the first gas distribution plenum fluidly coupled to a second gas distribution plenum between a bottom edge of the gas injection insert and a distribution platform, wherein the distribution platform is configured to direct gas horizontally, and wherein the second gas distribution plenum is vertically offset from the outlet of the one or more peripheral channels, the plasma source including a dielectric sidewall surrounding the gas injection insert and the region, the plasma source surrounded by an induction coil;
generating an inductively coupled plasma within the region with the induction coil positioned proximate the dielectric sidewall and horizontally overlapping the region, wherein the plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium;
delivering the plasma from the plasma source to a process chamber coupled therewith, wherein the plasma flows through a separation grid disposed between the plasma source and a substrate to be processed; and
processing the substrate within the process chamber, wherein processing the substrate includes:
contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid; and
heating the substrate.