US 11,854,649 B2
Temperature-compensated time estimate for a block to reach a uniform charge loss state
Patrick R. Khayat, San Diego, CA (US); Steven Michael Kientz, Westminster, CO (US); Sivagnanam Parthasarathy, Carlsbad, CA (US); Mustafa N. Kaynak, San Diego, CA (US); and Vamsi Pavan Rayaprolu, San Jose, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 18, 2022, as Appl. No. 17/675,592.
Prior Publication US 2023/0267968 A1, Aug. 24, 2023
Int. Cl. G11C 7/04 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G06F 3/06 (2006.01)
CPC G11C 7/04 (2013.01) [G06F 3/064 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
monitoring a temperature associated with a block of the memory device, the block comprising a plurality of wordlines;
determining a first amount of time between when memory cells associated with a first wordline of the plurality of wordlines of the block were written and when memory cells associated with a last wordline of the plurality of wordlines of the block were written, wherein the first amount of time is normalized according to the temperature associated with the block; and
determining, based at last in part on the first amount of time and on an associated scaling factor, an estimate of when the block will reach a uniform charge loss state.