US 11,854,647 B2
Voltage level shifter transition time reduction
Pierguido Garofalo, San Donato (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 29, 2021, as Appl. No. 17/388,359.
Prior Publication US 2023/0036502 A1, Feb. 2, 2023
Int. Cl. G11C 5/14 (2006.01); G05F 1/46 (2006.01); G05F 1/59 (2006.01); G05F 1/575 (2006.01)
CPC G11C 5/147 (2013.01) [G05F 1/462 (2013.01); G05F 1/575 (2013.01); G05F 1/59 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a level shifter that:
receives an input in a first power domain;
provides a first output in a second power domain; and
provides a second output in the second power domain; and
a ramp selection circuit that:
receives as input the first output and the second output from the level shifter;
inverts the second output; and
provides one of the first output and the inverted second output as an output of the ramp selection circuit.