US 11,854,590 B2
Reference generation for narrow-range sense amplifiers
Frank Tzen-Wen Guo, Danville, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 23, 2021, as Appl. No. 17/239,505.
Prior Publication US 2022/0343960 A1, Oct. 27, 2022
Int. Cl. G11C 11/16 (2006.01)
CPC G11C 11/1673 (2013.01) [G11C 11/1675 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory system comprising:
a memory array comprising:
a plurality of data columns that are configured to store data and provide a data signal in response to a read operation;
a first plurality of reference columns in the memory array configured to provide same logic 0 reference signals, wherein the first plurality of reference columns are distributed throughout the memory array among the plurality of data columns; and
a second plurality of reference columns in the memory array configured to provide same logic 1 reference signals, wherein the second plurality of reference columns are distributed throughout the memory array among the plurality of data columns;
a column multiplexer configured to:
select a first reference column in the first plurality of reference columns that is closest to a data column in the plurality of data columns from which the data signal is being read; and
select a second reference column in the second plurality of reference columns that is closest to the data column; and
a circuit configured to combine at least the logic 0 reference signal from the first reference column and the logic 1 reference signal from the second referenc column to generate a reference signal for a sense amplifier to identify the data signal provided from the plurality of data columns.