US 11,851,785 B2
Aluminum nitride passivation layer for mercury cadmium telluride in an electrical device
Andrew Clarke, Santa Barbara, CA (US); David R. Rhiger, Goleta, CA (US); George Grama, Lompoc, CA (US); and Stuart B. Farrell, Goleta, CA (US)
Assigned to Raytheon Company, Waltham, MA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on May 21, 2021, as Appl. No. 17/326,615.
Prior Publication US 2022/0372651 A1, Nov. 24, 2022
Int. Cl. H01L 31/18 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/60 (2006.01)
CPC C30B 25/183 (2013.01) [C30B 29/403 (2013.01); C30B 29/605 (2013.01); H01L 31/1832 (2013.01); H01L 31/1868 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An electrical device comprising:
a mercury cadmium telluride (Hg1-xCdxTe) layer; and
a passivation layer overlying the mercury cadmium telluride layer;
wherein the passivation layer includes an aluminum nitride (AlNx) passivation layer.