US 11,851,783 B2
Open Czochralski furnace for single crystal growth
Yu Wang, Meishan (CN); Weiming Guan, Meishan (CN); and Zhenxing Liang, Meishan (CN)
Assigned to MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Meishan (CN)
Filed by MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Sichuan (CN)
Filed on Dec. 7, 2022, as Appl. No. 18/062,597.
Application 18/062,597 is a continuation of application No. 17/451,844, filed on Oct. 22, 2021, granted, now 11,572,634.
Application 17/451,844 is a continuation of application No. 17/035,741, filed on Sep. 29, 2020, granted, now 11,155,930, issued on Oct. 26, 2021.
Application 17/035,741 is a continuation of application No. 16/903,326, filed on Jun. 16, 2020, granted, now 10,844,514, issued on Nov. 24, 2020.
Application 16/903,326 is a continuation of application No. PCT/CN2019/101698, filed on Aug. 21, 2019.
Prior Publication US 2023/0100654 A1, Mar. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 15/14 (2006.01); C30B 15/30 (2006.01)
CPC C30B 15/14 (2013.01) [C30B 15/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A temperature field device for crystal growth, comprising:
a drum;
a filler filled in the drum and configured to support a crucible;
a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and
a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.