US 11,851,782 B2
Open Czochralski furnace for single crystal growth
Yu Wang, Meishan (CN); Weiming Guan, Meishan (CN); and Zhenxing Liang, Meishan (CN)
Assigned to MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Meishan (CN)
Filed by MEISHAN BOYA ADVANCED MATERIALS CO., LTD., Sichuan (CN)
Filed on Dec. 7, 2022, as Appl. No. 18/062,595.
Application 18/062,595 is a continuation of application No. 17/451,844, filed on Oct. 22, 2021, granted, now 11,572,634.
Application 17/451,844 is a continuation of application No. 17/035,741, filed on Sep. 29, 2020, granted, now 11,155,930, issued on Oct. 26, 2021.
Application 17/035,741 is a continuation of application No. 16/903,326, filed on Jun. 16, 2020, granted, now 10,844,514, issued on Nov. 24, 2020.
Application 16/903,326 is a continuation of application No. PCT/CN2019/101698, filed on Aug. 21, 2019.
Prior Publication US 2023/0099530 A1, Mar. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 15/14 (2006.01); C30B 15/30 (2006.01)
CPC C30B 15/14 (2013.01) [C30B 15/30 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A temperature field device for crystal growth, comprising:
a first drum;
a second drum located inside the first drum;
a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum;
a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum, wherein the first cover plate includes a first through hole and a second through hole configured for gas passing; and
a second cover plate mounted inside the first drum and covering a top end of the second drum, wherein the second cover plate includes a third through hole corresponding to the first through hole and a fourth through hole corresponding to the second through hole, the third through hole and the first through hole having a same rotation central axis, and the fourth through hole and the second through hole having a same rotation central axis.