CPC C23C 16/325 (2013.01) [C01B 32/21 (2017.08); C23C 16/045 (2013.01)] | 11 Claims |
1. A method of depositing a silicon carbide coating on a substrate by chemical vapor deposition (CVD) using a dimethyldichlorosilane precursor material, wherein the dimethyldichlorosilane precursor material comprises:
(A) dimethyldichlorosilane as a main component and
(B) at least one further component being a siloxane compound or a mixture of siloxane compounds, wherein a content of the at least one further component (B) is >0 to 2.00 wt. % relative to the dimethyldichlorosilane precursor material.
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