CPC C23C 14/08 (2013.01) [C03C 3/064 (2013.01); C03C 4/14 (2013.01); C23C 14/0021 (2013.01); H01M 4/136 (2013.01); H01M 4/1397 (2013.01); C03C 2204/00 (2013.01)] | 15 Claims |
1. A vapour deposition method for preparing an amorphous lithium borosilicate compound or doped lithium borosilicate compound, the method comprising:
providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron, and a source of silicon, and, optionally, a source of at least one dopant element;
providing a substrate;
delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element, wherein the rate of flow of said oxygen is at least about 8×10−8 m3/s; and
co-depositing the component elements from the vapour sources onto the substrate, wherein:
the component elements react on the substrate to form the amorphous compound; and
the substrate is provided at a temperature of 110° C. when the component elements from the vapour sources are co-deposited onto the substrate, the temperature of the substrate resulting in a relative dominance of silicate and orthosilicate from the co-deposition of the component elements.
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