US 11,839,167 B2
Individually tunable quantum dots in all-van der waals heterostructures
Parsa Bonderson, Santa Barbara, CA (US); Chetan Nayak, Santa Barbara, CA (US); David Reilly, Sydney (AU); Andrea Franchini Young, Goleta, CA (US); and Michael Zaletel, Berkeley, CA (US)
Assigned to Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed by Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed on Dec. 28, 2020, as Appl. No. 17/134,953.
Claims priority of provisional application 63/070,115, filed on Aug. 25, 2020.
Prior Publication US 2022/0069219 A1, Mar. 3, 2022
Int. Cl. H01L 49/00 (2006.01); G06N 10/00 (2022.01); H10N 99/00 (2023.01)
CPC H10N 99/05 (2023.02) [G06N 10/00 (2019.01); H10N 99/03 (2023.02)] 24 Claims
OG exemplary drawing
 
1. A quantum dot device comprising:
an all-van der Waals heterostructure incorporating a plurality of distinct transverse layers, each of the layers comprising a van der Waals material, the layers stacked vertically and comprising, in order: a bottom electrode layer, a bottom dielectric layer stacked on top of the bottom electrode layer, an active layer stacked on top of the bottom dielectric layer, a top dielectric layer stacked on top of the active layer, and a top electrode layer stacked on top of the top dielectric layer; and
a dot electrode positioned over the top dielectric layer at an aperture in the top electrode layer, wherein the top electrode layer comprises a top electrode surrounding the aperture.