CPC H10N 99/05 (2023.02) [G06N 10/00 (2019.01); H10N 99/03 (2023.02)] | 24 Claims |
1. A quantum dot device comprising:
an all-van der Waals heterostructure incorporating a plurality of distinct transverse layers, each of the layers comprising a van der Waals material, the layers stacked vertically and comprising, in order: a bottom electrode layer, a bottom dielectric layer stacked on top of the bottom electrode layer, an active layer stacked on top of the bottom dielectric layer, a top dielectric layer stacked on top of the active layer, and a top electrode layer stacked on top of the top dielectric layer; and
a dot electrode positioned over the top dielectric layer at an aperture in the top electrode layer, wherein the top electrode layer comprises a top electrode surrounding the aperture.
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