US 11,838,014 B1
Semiconductor device having voltage generator generating well potential
Keiichiro Minakuchi, Kanagawa (JP); and Yuhei Takahashi, Kanagawa (JP)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on Jul. 28, 2022, as Appl. No. 17/815,922.
Int. Cl. G05F 3/02 (2006.01); H03K 3/00 (2006.01); H03K 17/687 (2006.01); G11C 17/08 (2006.01); H01L 29/10 (2006.01)
CPC H03K 17/687 (2013.01) [G11C 17/08 (2013.01); H01L 29/1083 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a MOS transistor arranged in a well region supplied with a well potential;
a temperature sensor configured to generate a control code indicating an ambient temperature; and
a voltage generator configured to perform a first control operation controlling a level of the well potential responsive to the control code in a first condition and perform a second control operation controlling a level of the well potential regardless of the control code in a second condition.