US 11,838,013 B2
Semiconductor device
Yasuyuki Fujiwara, Yokohama Kanagawa (JP); Yiyao Liu, Saitama Saitama (JP); Yusuke Sato, Sagamihara (JP); Naotsugu Kako, Yokohama Kanagawa (JP); and Hideaki Majima, Tokyo (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on May 31, 2022, as Appl. No. 17/829,048.
Application 17/829,048 is a continuation of application No. 17/204,003, filed on Mar. 17, 2021, granted, now 11,381,237.
Claims priority of application No. 2020-157674 (JP), filed on Sep. 18, 2020.
Prior Publication US 2022/0294443 A1, Sep. 15, 2022
Int. Cl. H03K 17/22 (2006.01); H03K 17/693 (2006.01)
CPC H03K 17/223 (2013.01) [H03K 17/693 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device that normally-off drives a first transistor that normally-on drives, the semiconductor device comprising:
a first circuitry that is connected with a power supply voltage terminal and a ground, detects the power supply voltage, and outputs a transition state of the power supply voltage;
a second circuitry that is connected with the power supply voltage terminal, the ground, the first circuitry, and a second transistor, and outputs a drive voltage of the second transistor connected in series with the first transistor, based on an output of the first circuitry; and
a first diode having an anode connected with a drive terminal of the first transistor and a cathode connected with an output terminal of the second transistor, wherein
the first circuitry comprises:
a reference voltage generation circuitry that generates a reference voltage; and
a voltage comparison circuitry that compares the reference voltage with the power supply voltage terminal; and
the second circuitry comprises:
an output buffer that controls an output of the voltage comparison circuitry to apply the output to a gate of the second transistor.