US 11,837,664 B2
Doped polar layers and semiconductor device incorporating same
Ramesh Ramamoorthy, Moraga, CA (US); Sasikanth Manipatruni, Portland, OR (US); and Gaurav Thareja, Santa Clara, CA (US)
Assigned to Kepler Computing Inc., San Francisco, CA (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on Oct. 10, 2022, as Appl. No. 18/045,415.
Application 18/045,415 is a division of application No. 16/842,535, filed on Apr. 7, 2020, granted, now 11,469,327.
Claims priority of provisional application 62/831,044, filed on Apr. 8, 2019.
Prior Publication US 2023/0057354 A1, Feb. 23, 2023
Int. Cl. H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/74 (2006.01); H01L 29/737 (2006.01); H10B 53/30 (2023.01); H10B 12/00 (2023.01); H01L 49/02 (2006.01)
CPC H01L 29/78618 (2013.01) [H01L 28/56 (2013.01); H01L 28/57 (2013.01); H01L 28/60 (2013.01); H01L 28/65 (2013.01); H01L 29/2003 (2013.01); H01L 29/6684 (2013.01); H01L 29/7375 (2013.01); H01L 29/7408 (2013.01); H01L 29/7869 (2013.01); H10B 53/30 (2023.02); H10B 12/312 (2023.02); H10B 12/36 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a capacitor stack comprising:
a crystalline polar layer comprising a base polar material substitutionally doped with a dopant;
the base polar material comprising a metal oxide having one of a perovskite crystal structure or a hexagonal crystal structure, wherein the metal oxide comprises one or more metal elements;
the dopant comprising a metal element of one of 4d series, 5d series, 4f series or 5f series that is different from the one or more metal elements of the metal oxide and is present at a concentration such that a ferroelectric switching voltage of the capacitor stack is lower than about 600 mV; and
first and second crystalline conductive or semiconductive oxide electrodes on opposing sides of the crystalline polar layer, wherein the crystalline polar layer has a same crystal structure as one or both of the first and second crystalline conductive or semiconductive oxide electrodes.