US 11,837,634 B2
Semiconductor device including superlattice with oxygen and carbon monolayers
Keith Doran Weeks, Chandler, AZ (US); Nyles Wynn Cody, Tempe, AZ (US); Marek Hytha, Brookline, MA (US); Robert J. Mears, Wellesley, MA (US); Robert John Stephenson, Duxford (GB); and Hideki Takeuchi, San Jose, CA (US)
Assigned to ATOMERA INCORPORATED, Los Gatos, CA (US)
Filed by Atomera Incorporated, Los Gatos, CA (US)
Filed on Jun. 30, 2021, as Appl. No. 17/305,098.
Claims priority of provisional application 63/047,356, filed on Jul. 2, 2020.
Prior Publication US 2022/0005926 A1, Jan. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/15 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/152 (2013.01) [H01L 29/66477 (2013.01); H01L 29/7849 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor layer; and
a superlattice adjacent the semiconductor layer and comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
the at least one non-semiconductor monolayer in a first group of layers of the superlattice comprising oxygen and devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice comprising carbon, the second group of layers being above the first group of layers in the superlattice.