US 11,837,604 B2
Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices
Kangguo Cheng, Schenectady, NY (US); Shogo Mochizuki, Mechanicville, NY (US); and Juntao Li, Cohoes, NY (US)
Assigned to International Business Machine Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 22, 2021, as Appl. No. 17/481,353.
Prior Publication US 2023/0099156 A1, Mar. 30, 2023
Int. Cl. H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 29/04 (2006.01); H01L 27/092 (2006.01); H01L 27/06 (2006.01)
CPC H01L 27/1203 (2013.01) [H01L 21/84 (2013.01); H01L 27/092 (2013.01); H01L 29/045 (2013.01); H01L 27/0688 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate with a first crystalline surface orientation;
a first type field-effect transistor directly on the semiconductor substrate and directly under a dielectric material contacting a second type field-effect transistor, wherein the first type field-effect transistor with the first crystalline surface orientation in a first plurality of nanosheet channels; and
the second type field-effect transistor directly on the dielectric material with a second crystalline surface orientation in a second plurality of nanosheet channels, wherein the second plurality of nanosheet channels are parallel to the semiconductor substrate.