CPC H01L 27/0262 (2013.01) [H01L 29/7436 (2013.01)] | 10 Claims |
1. An electrostatic discharge protection apparatus, comprising:
a substrate;
a first well having a first conductivity type and disposed in the substrate;
a second well having a second conductivity type and disposed in the first well;
a first doping region having the first conductivity type and disposed in the second well;
a second doping region having the first conductivity type and disposed in the second well;
a third doping region having the second conductivity type and disposed in the second well; and
a fourth doping region having the first conductivity type and disposed in the substrate,
wherein the first conductivity type is different from the second conductivity type; the second well, the first well, the substrate and the fourth doping region form a silicon controlled rectifier; electrostatic discharge current flowing into the first doping region flows to the fourth doping region through the silicon controlled rectifier.
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