US 11,837,599 B2
Semiconductor device
Masahiro Masunaga, Tokyo (JP); Shinji Nomoto, Tokyo (JP); Ryo Kuwana, Tokyo (JP); and Isao Hara, Tokyo (JP)
Assigned to HITACHI, LTD., Tokyo (JP)
Filed by Hitachi, Ltd., Tokyo (JP)
Filed on Oct. 8, 2021, as Appl. No. 17/497,639.
Claims priority of application No. 2020-186277 (JP), filed on Nov. 9, 2020.
Prior Publication US 2022/0149035 A1, May 12, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 29/16 (2006.01)
CPC H01L 27/0255 (2013.01) [H01L 29/1608 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an electrostatic protection circuit; and
a MOSFET including a gate terminal, wherein
the electrostatic protection circuit includes
a positive-side first power supply terminal,
a negative-side second power supply terminal,
a first protection diode including a first cathode terminal electrically connected to the first power supply terminal and a first anode terminal electrically connected to the gate terminal,
a second protection diode including a second anode terminal electrically connected to the second power supply terminal via a first resistance element, and a second cathode terminal electrically connected to the gate terminal, and
a bipolar transistor including a base terminal, an emitter terminal, and a collector terminal,
wherein the first protection diode, the second protection diode, the bipolar transistor, and the first resistance element are respectively formed on a semiconductor substrate made of silicon carbide, and
the bipolar transistor is electrically connected to the second anode terminal, the gate terminal, and the first power supply terminal.