US 11,837,594 B2
Microelectronic devices and electronic systems
Fatma Arzum Simsek-Ege, Boise, ID (US); and Kunal R. Parekh, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 30, 2021, as Appl. No. 17/364,476.
Prior Publication US 2023/0005903 A1, Jan. 5, 2023
Int. Cl. H01L 25/18 (2023.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H10B 12/00 (2023.01)
CPC H01L 25/18 (2013.01) [H01L 24/83 (2013.01); H01L 25/50 (2013.01); H10B 12/036 (2023.02); H10B 12/33 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/488 (2023.02); H01L 2224/83895 (2013.01); H01L 2224/83896 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
array regions individually comprising:
memory cells comprising access devices and storage node devices;
digit lines coupled to the access devices and extending in a first direction;
word lines coupled to the access devices and extending in a second direction orthogonal to the first direction; and
control logic devices over and in electrical communication with the memory cells;
digit line exit regions horizontally alternating with the array regions in the first direction and individually comprising:
portions of the digit lines extending beyond the array regions adjacent thereto;
digit line contact structures extending through at least some of the portions of the digit lines;
metallic interconnect structures on the digit line contact structures and individually comprising:
a vertical contact region comprising a first portion of a metal material; and
a horizontal pad region overlying the vertical contact region and having greater horizontal dimensions than the vertical contact region, the horizontal pad region comprising:
a first additional portion of the metal material integral and continuous with the first portion of the metal material; and
a first further portion of the metal material overlying and bonded to the first additional portion of the metal material;
contact structures on the metallic interconnect structures; and
routing structures coupled to the contact structures;
word line exit regions horizontally alternating with the array regions in the second direction and individually comprising:
portions of the word lines extending beyond the array regions adjacent thereto;
word line contact structures extending through at least some of the portions of the word lines;
additional metallic interconnect structures on the word line contact structures and individually comprising:
an additional vertical contact region comprising a second portion of the metal material; and
an additional horizontal pad region overlying the additional vertical contact region and having greater horizontal dimensions than the additional vertical contact region, the additional horizontal pad region comprising:
a second additional portion of the metal material integral and continuous with the second portion of the metal material; and
a second further portion of the metal material overlying and bonded to the second additional portion of the metal material;
additional contact structures on the additional metallic interconnect structures; and
additional routing structures coupled to the additional contact structures.